? 2006 ixys corporation all rights reserved g = gate d = drain s = source tab = drain ds99596e(08/06) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0 v, i d = 250 a 800 v v gs(th) v ds = v gs , i d = 100 a 3.0 5.5 v i gss v gs = 30 v, v ds = 0 v 100 na i dss v ds = v dss 5 a v gs = 0 v t j = 125 c 150 a r ds(on) v gs = 10 v, i d = 0.5 i d25 3.4 pulse test, t 300 s, duty cycle d 2 % polarhv tm power mosfet n-channel enhancement mode avalanche rated features z international standard packages z unclamped inductive switching (uis) rated z low package inductance - easy to drive and to protect advantages z easy to mount z space savings z high power density to-263 (ixta) to-220 (ixtp) d (tab) g s g s (tab) IXTA4N80P ixtp4n80p v dss = 800 v i d25 = 3.6 a r ds(on) 3.4 symbol test conditions maximum ratings v dss t j = 25 c to 150 c 800 v v dgr t j = 25 c to 150 c; r gs = 1 m 800 v v gss continuous 30 v v gsm transient 40 v i d25 t c = 25 c 3.6 a i dm t c = 25 c, pulse width limited by t jm 8a i ar t c = 25 c2a e ar t c = 25 c20mj e as t c = 25 c 250 mj dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 10 v/ns t j 150 c, r g = 18 p d t c = 25 c 100 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c t sold plastic body for 10 s 260 c m d mounting torque (to-220) 1.13/10 nm/lb.in. weight to-220 4 g to-263 3 g advance technical information free datasheet http:///
ixys reserves the right to change limits, test conditions, and dimensions. IXTA4N80P ixtp4n80p symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = 0.5 i d25 , pulse test 2.5 4.0 s c iss 750 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 70 pf c rss 6.3 pf t d(on) 22 ns t r v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 24 ns t d(off) r g = 18 (external) 60 ns t f 29 ns q g(on) 14.2 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 4.8 nc q gd 4.8 nc r thjc 1.25 c/w r thcs (to-220) 0.25 c/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 3.5 a i sm repetitive 8 a v sd i f = i s , v gs = 0 v 1.5 v t rr i f = 3.5 a, -di/dt = 100 a/ s, 560 ns pulse test, t 300 s, duty cycle d 2 % to-263 (ixta) outline to-220 (ixtp) outline pins: 1 - gate 2 - drain 3 - source 4 - drain ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 advance technical information the product presented herein is under development. the technical specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. ixys reserves the right to change limits, test conditions, and dimensions without notice. free datasheet http:///
? 2006 ixys corporation all rights reserved fig. 1. extended output characteristics @ 25oc 0 1 2 3 4 5 6 0 5 10 15 20 25 30 v ds - volts i d - amperes v gs = 10v 8v 7v 6v fig. 2. output characteristics @ 125oc 0 0.5 1 1.5 2 2.5 3 3.5 0 5 10 15 20 25 30 v ds - volts i d - amperes v gs = 10v 7v 6v 5v fig. 3. r ds(on) normalized to i d = 2a value vs. junction temperature 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 3.6a i d = 1.8a fig. 4. r ds(on) normalized to i d = 2a value vs. drain current 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 0123456 i d - amperes r ds(on) - normalized v gs = 10v t j = 125oc t j = 25oc fig. 6. input admittance 0 0.5 1 1.5 2 2.5 3 3.5 4 44.5 55.566.57 v gs - volts i d - amperes t j = 125oc 25oc -40oc fig. 5. maximum drain current vs. case temperature 0 0.5 1 1.5 2 2.5 3 3.5 4 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes IXTA4N80P ixtp4n80p free datasheet http:///
ixys reserves the right to change limits, test conditions, and dimensions. IXTA4N80P ixtp4n80p ixys ref: t_4n80p (3j) 10-23-06.xls fig. 7. transconductance 0 1 2 3 4 5 6 7 00.511.522.533.544.5 i d - amperes g f s - siemens t j = - 40oc t j = 25oc t j = 125oc fig. 8. forward voltage drop of intrinsic diode 0 1 2 3 4 5 6 7 8 9 10 11 12 0.40.50.60.70.80.9 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 9. gate charge 0 1 2 3 4 5 6 7 8 9 10 0123456789101112131415 q g - nanocoulombs v gs - volts v ds = 400v i d = 1.8a i g = 10ma fig. 10. capacitance 1 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 11. maximum transient thermal impedance 0.01 0.10 1.00 10.00 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w free datasheet http:///
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